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  26/11/09 db92651m-aas/a3 approvals z ul recognised, file no. e91231 'x' specification approvals z z z z z vde 0884 in 3 available lead forms : - - std - g form - smd approved to cecc 00802 description the tlp627 is an optically coupled isolator consisting of infrared light emitting diode and a high voltage npn silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 4 pin dual in line plastic package. features z options :- 10mm lead spread - add g after part no. surface mount - add sm after part no. tape&reel - add smt&r after part no. z high isolation voltage (5.3kv rms ,7.5kv pk ) z high current transfer ratio ( 1000% min) z high bv ceo (300v min.) z low input current 1ma i f applications z modems z copiers, facsimiles z numerical control machines z signal transmission between systems of different potentials and impedances high voltage darlington output optically coupled isolator TLP627X tlp627 10.16 surface mount surface mount surface mount surface mount surface mount 0.26 7.62 option g option g option g option g option g option sm option sm option sm option sm option sm isocom components ltd unit 25b, park view road west, park view industrial estate, brenda road hartlepool, ts25 1yd england tel: (01429)863609 fax : (01429) 863581 e-mail sales@isocom.co.uk http://www.isocom.com 1.2 3.0 4.0 3.0 3.35 7.0 6.0 0.5 0.5 7.62 0.26 13 max 2.54 dimensions in mm 5.08 4.08 4 3 1 2 10.46 9.86 0.6 0.1 1.25 0.75 absolute maximum ratings (25c unless otherwise specified) storage temperature -55c to + 125c operating temperature -30c to + 100c lead soldering temperature (1/16 inch (1.6mm) from case for 10 secs) 260c input diode forward current 50ma reverse voltage 6v power dissipation 70mw output transistor collector-emitter voltage bv ceo 300v collector current i c 150ma power dissipation 150mw power dissipation total power dissipation 200mw
db92651m-aas/a3 parameter min typ max units test condition input forward voltage (v f ) 1.0 1.15 1.3 v i f = 10ma reverse current (i r )10 av r = 4v output collector-emitter breakdown (bv ceo ) 300 v i c = 0.1ma emitter-collector breakdown (bv eco ) 0.3 v i e = 0.1ma collector-emitter dark current (i ceo ) 10 200 na v ce = 200v coupled current transfer ratio (ctr) 1000 4000 % 1ma i f , 1v v ce saturated ctr (ctr sat ) 500 % 10ma i f , 1v v ce collector-emitter saturation voltagev ce(sat) 1.2 v 10ma i f , 100ma i c collector-emitter saturation voltagev ce(sat) 1.0 v 1ma i f , 10ma i c input to output isolation voltage v iso 5300 v rms see note 1 7500 v pk see note 1 input-output isolation resistance r iso 5x10 10 v io = 500v (note 1) input-output capacitance cf 1 pf v = 0, f =1mhz output rise time tr 40 sv cc = 10v, i c = 10ma, output fall time tf 15 sr l = 100 note 1 measured with input leads shorted together and output leads shorted together. note 2 special selections are available on request. please consult the factory. 26/11/09 electrical characteristics ( t a = 25c unless otherwise noted ) input output 10% 90% 10% 90% t off t r t on t f output v cc i c = 10ma input figure 1 100


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